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| BAS16 series High-speed switching diodes Rev. 05 -- 25 August 2008 Product data sheet 1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Package NXP BAS16 BAS16H BAS16J BAS16L BAS16T BAS16VV BAS16VY BAS16W BAS316 BAS516 SOT23 SOD123F SOD323F SOD882 SOT416 SOT666 SOT363 SOT323 SOD323 SOD523 JEITA SC-90 SC-75 SC-88 SC-70 SC-76 SC-79 JEDEC TO-236AB single single single single single triple isolated triple isolated single single single Configuration Package configuration small small and flat lead very small and flat lead leadless ultra small ultra small ultra small and flat lead very small very small very small ultra small and flat lead Type number 1.2 Features I High switching speed: trr 4 ns I Low leakage current I Repetitive peak reverse voltage: VRRM 100 V I Low capacitance I Reverse voltage: VR 100 V I Small SMD plastic packages 1.3 Applications I High-speed switching I General-purpose switching NXP Semiconductors BAS16 series High-speed switching diodes 1.4 Quick reference data Table 2. Symbol Per diode VR IR trr [1] Quick reference data Parameter reverse voltage reverse current reverse recovery time VR = 80 V [1] Conditions Min - Typ - Max 100 0.5 4 Unit V A ns When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA. 2. Pinning information Table 3. Pin 1 2 3 Pinning Description anode not connected cathode 1 2 006aaa144 Simplified outline Graphic symbol BAS16; BAS16T; BAS16W 3 1 3 2 006aaa764 BAS16H; BAS16J; BAS316; BAS516 1 2 cathode anode [1] 1 001aab540 2 1 2 006aab040 BAS16L 1 2 cathode anode [1] 1 2 1 2 006aab040 Transparent top view BAS16VV; BAS16VY 1 2 3 4 5 6 anode (diode 1) anode (diode 2) anode (diode 3) cathode (diode 3) cathode (diode 2) cathode (diode 1) 1 2 3 001aab555 6 5 4 6 5 4 1 2 3 006aab106 [1] The marking bar indicates the cathode. BAS16_SER_5 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 -- 25 August 2008 2 of 20 NXP Semiconductors BAS16 series High-speed switching diodes 3. Ordering information Table 4. Ordering information Package Name BAS16 BAS16H BAS16J BAS16L BAS16T BAS16VV BAS16VY BAS16W BAS316 BAS516 SC-90 SC-75 SC-88 SC-70 SC-76 SC-79 Description plastic surface-mounted package; 3 leads plastic surface-mounted package; 2 leads plastic surface-mounted package; 2 leads leadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm plastic surface-mounted package; 3 leads plastic surface-mounted package; 6 leads plastic surface-mounted package; 6 leads plastic surface-mounted package; 3 leads plastic surface-mounted package; 2 leads plastic surface-mounted package; 2 leads Version SOT23 SOD123F SOD323F SOD882 SOT416 SOT666 SOT363 SOT323 SOD323 SOD523 Type number 4. Marking Table 5. BAS16 BAS16H BAS16J BAS16L BAS16T BAS16VV BAS16VY BAS16W BAS316 BAS516 [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China Marking codes Marking code[1] A6* A1 AR S2 A6 53 16* A6* A6 6 Type number BAS16_SER_5 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 -- 25 August 2008 3 of 20 NXP Semiconductors BAS16 series High-speed switching diodes 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per diode VRRM VR IF repetitive peak reverse voltage reverse voltage forward current BAS16 BAS16H BAS16L BAS16T BAS16VV BAS16VY BAS16W BAS16J BAS316 BAS516 IFRM IFSM repetitive peak forward current non-repetitive peak forward current tp 0.5 s; 0.25 square wave tp = 1 s tp = 1 ms tp = 1 s Ptot total power dissipation BAS16 BAS16H Tamb 25 C Tamb 25 C [1] [2][5] [6] [5][6] [7] [4] [1] [2] Parameter Conditions Min - Max 100 100 215 215 155 200 175 250 Unit V V mA mA mA mA mA mA [1] [1][3] [1] [1] - 500 mA - 4 1 0.5 250 380 830 550 250 170 180 250 200 400 500 A A A mW mW mW mW mW mW mW mW mW mW mW BAS16J BAS16L BAS16T BAS16VV BAS16VY BAS16W BAS316 BAS516 Tamb 25 C Tamb 25 C Tsp 90 C Tamb 25 C Tsp 85 C Tamb 25 C Tsp 90 C Tsp 90 C [5][6] [7] [2][5] [6] [1] [1][3] [5][8] [1][3] [8] [1] [1][6] [1][5] [6] BAS16_SER_5 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 -- 25 August 2008 4 of 20 NXP Semiconductors BAS16 series High-speed switching diodes Table 6. Limiting values ...continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per device Tj Tamb Tstg [1] [2] [3] [4] [5] [6] [7] [8] Parameter junction temperature ambient temperature storage temperature Conditions Min -65 -65 Max 150 +150 +150 Unit C C C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB with 60 m copper strip line. Single diode loaded. Tj = 25 C prior to surge. Reflow soldering is the only recommended soldering method. Soldering point of cathode tab. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. Soldering points at pins 4, 5 and 6. 6. Thermal characteristics Table 7. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient BAS16 BAS16H BAS16J BAS16L BAS16VV Conditions in free air [1] [2][3] [3][4] [3][4] [2][3] [2][3] [5] [3][4] [5] Min Typ Max Unit - - 500 330 150 230 500 700 410 625 K/W K/W K/W K/W K/W K/W K/W K/W BAS16W Rth(j-t) thermal resistance from junction to tie-point BAS16 BAS16W [1] - - 330 300 K/W K/W BAS16_SER_5 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 -- 25 August 2008 5 of 20 NXP Semiconductors BAS16 series High-speed switching diodes Thermal characteristics ...continued Parameter thermal resistance from junction to solder point BAS16H BAS16J BAS16T BAS16VY BAS316 BAS516 [5][7] [6] [6] [6] [6] Table 7. Symbol Rth(j-sp) Conditions Min Typ Max Unit - - 70 55 350 260 150 120 K/W K/W K/W K/W K/W K/W [1] [2] [3] [4] [5] [6] [7] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB with 60 m copper strip line. Reflow soldering is the only recommended soldering method. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. Single diode loaded. Soldering point of cathode tab. Soldering points at pins 4, 5 and 6. 7. Characteristics Table 8. Characteristics Tamb = 25 C unless otherwise specified. Symbol Per diode VF forward voltage IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA IR reverse current VR = 25 V VR = 80 V VR = 25 V; Tj = 150 C VR = 80 V; Tj = 150 C Cd diode capacitance BAS16; BAS16H; BAS16J; BAS16L; BAS16T; BAS16VV; BAS16VY; BAS16W; BAS316 BAS516 trr VFR [1] [2] [3] BAS16_SER_5 Parameter Conditions [1] Min Typ Max Unit - - 715 855 1 1.25 30 0.5 30 50 1.5 mV mV V V nA A A A pF f = 1 MHz; VR = 0 V [2] [3] - 1 4 1.75 pF ns V reverse recovery time forward recovery voltage Pulse test: tp 300 s; 0.02. - When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA. When switched from IF = 10 mA; tr = 20 ns. (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 -- 25 August 2008 6 of 20 NXP Semiconductors BAS16 series High-speed switching diodes 103 IF (mA) 102 006aab132 102 IFSM (A) 10 mbg704 10 1 (1) (2) (3) (4) 1 10-1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VF (V) 10-1 1 10 102 103 tp (s) 104 (1) Tamb = 150 C (2) Tamb = 85 C (3) Tamb = 25 C (4) Tamb = -40 C Based on square wave currents. Tj = 25 C; prior to surge Fig 1. Forward current as a function of forward voltage; typical values 006aab133 (1) Fig 2. Non-repetitive peak forward current as a function of pulse duration; maximum values mbg446 102 IR (A) 10 1 10-1 10-2 10-3 10-4 10-5 0 20 40 60 (3) 0.8 Cd (pF) 0.6 (2) 0.4 0.2 (4) 0 80 VR (V) 100 0 4 8 12 VR (V) 16 (1) Tamb = 150 C (2) Tamb = 85 C (3) Tamb = 25 C (4) Tamb = -40 C f = 1 MHz; Tamb = 25 C Fig 3. Reverse current as a function of reverse voltage; typical values Fig 4. Diode capacitance as a function of reverse voltage; typical values BAS16_SER_5 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 -- 25 August 2008 7 of 20 NXP Semiconductors BAS16 series High-speed switching diodes 8. Test information tr D.U.T. RS = 50 V = VR + IF x RS IF SAMPLING OSCILLOSCOPE Ri = 50 VR mga881 tp t 10 % + IF trr t 90 % input signal output signal (1) (1) IR = 1 mA Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle = 0.05 Oscilloscope: rise time tr = 0.35 ns Fig 5. Reverse recovery time test circuit and waveforms I 1 k 450 I 90 % V RS = 50 D.U.T. OSCILLOSCOPE Ri = 50 10 % t tr tp input signal VFR t output signal mga882 Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp 100 ns; duty cycle 0.005 Fig 6. Forward recovery voltage test circuit and waveforms 9. Package outline 1.7 1.5 1 3 3.0 2.8 1.1 0.9 1.2 1.0 0.45 0.15 2.5 1.4 2.1 1.2 3.6 3.4 2.7 2.5 0.55 0.35 1 2 1.9 Dimensions in mm 0.48 0.38 0.15 0.09 04-11-04 Dimensions in mm 2 0.70 0.55 0.25 0.10 04-11-29 Fig 7. Package outline BAS16 (SOT23/TO-236AB) Fig 8. Package outline BAS16H (SOD123F) BAS16_SER_5 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 -- 25 August 2008 8 of 20 NXP Semiconductors BAS16 series High-speed switching diodes 1.35 1.15 1 0.5 0.3 0.80 0.65 0.62 0.55 2 0.50 0.46 0.30 0.22 2.7 2.3 1.8 1.6 0.30 0.22 2 0.40 0.25 Dimensions in mm 0.25 0.10 04-09-13 0.55 0.47 Dimensions in mm 0.65 1.02 0.95 1 cathode marking on top side 03-04-17 Fig 9. Package outline BAS16J (SOD323F/SC-90) 1.8 1.4 3 0.45 0.15 0.95 0.60 Fig 10. Package outline BAS16L (SOD882) 1.7 1.5 6 5 4 0.3 0.1 0.6 0.5 1.75 0.9 1.45 0.7 1.7 1.5 1.3 1.1 pin 1 index 1 2 0.30 0.15 1 0.25 0.10 04-11-04 Dimensions in mm 1 0.5 1 2 3 0.27 0.17 0.18 0.08 04-11-08 Dimensions in mm Fig 11. Package outline BAS16T (SOT416/SC-75) 2.2 1.8 6 5 4 0.45 0.15 1.1 0.8 Fig 12. Package outline BAS16VV (SOT666) 2.2 1.8 3 0.45 0.15 1.1 0.8 2.2 1.35 2.0 1.15 pin 1 index 2.2 1.35 2.0 1.15 1 0.65 1.3 Dimensions in mm 2 3 0.3 0.2 0.25 0.10 1 2 0.4 0.3 1.3 0.25 0.10 04-11-04 06-03-16 Dimensions in mm Fig 13. Package outline BAS16VY (SOT363) Fig 14. Package outline BAS16W (SOT323/SC-70) BAS16_SER_5 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 -- 25 August 2008 9 of 20 NXP Semiconductors BAS16 series High-speed switching diodes 1.35 1.15 1 0.45 0.15 1.1 0.8 0.85 0.75 1 0.65 0.58 2.7 2.3 1.8 1.6 1.65 1.25 1.55 1.15 2 0.40 0.25 Dimensions in mm 0.25 0.10 03-12-17 Dimensions in mm 0.34 0.26 2 0.17 0.11 02-12-13 Fig 15. Package outline BAS316 (SOD323/SC-76) Fig 16. Package outline BAS516 (SOD523/SC-79) 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number BAS16 BAS16H BAS16J BAS16L BAS16T BAS16VV BAS16VY BAS16W BAS316 BAS516 Package SOT23 SOD123F SOD323F SOD882 SOT416 SOT666 SOT363 SOT323 SOD323 SOD523 Description 4 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel 2 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel 2 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel; T1 4 mm pitch, 8 mm tape and reel; T2 4 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel 2 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel [1] [2] [3] For further information and the availability of packing methods, see Section 14. T1: normal taping T2: reverse taping [2] [3] Packing quantity 3000 -215 -115 -115 -115 -115 -125 -115 -115 -115 4000 -115 8000 -315 -315 10000 -235 -135 -135 -315 -135 -135 -165 -135 -135 -135 BAS16_SER_5 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 -- 25 August 2008 10 of 20 NXP Semiconductors BAS16 series High-speed switching diodes 11. Soldering 3.3 2.9 1.9 solder lands solder resist 3 1.7 2 solder paste 0.6 (3x) occupied area Dimensions in mm 0.5 (3x) 0.6 (3x) 1 sot023_fr 0.7 (3x) Fig 17. Reflow soldering footprint BAS16 (SOT23/TO-236AB) 2.2 1.2 (2x) 1.4 (2x) solder lands 4.6 2.6 solder resist occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 18. Wave soldering footprint BAS16 (SOT23/TO-236AB) BAS16_SER_5 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 -- 25 August 2008 11 of 20 NXP Semiconductors BAS16 series High-speed switching diodes 4.4 4 2.9 1.6 solder lands solder resist 2.1 1.6 1.1 1.2 solder paste occupied area 1.1 (2x) Reflow soldering is the only recommended soldering method. Dimensions in mm Fig 19. Reflow soldering footprint BAS16H (SOD123F) 3.05 2.2 2.1 solder lands solder resist 1.65 0.95 0.5 (2x) 0.6 (2x) solder paste occupied area 0.5 (2x) 0.6 (2x) Dimensions in mm sod323f_fr Reflow soldering is the only recommended soldering method. Fig 20. Reflow soldering footprint BAS16J (SOD323F) BAS16_SER_5 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 -- 25 August 2008 12 of 20 NXP Semiconductors BAS16 series High-speed switching diodes 1.3 0.7 R0.05 (8x) solder lands solder resist solder paste occupied area 0.3 (2x) 0.4 (2x) sod882_fr 0.9 0.6 0.7 (2x) (2x) Dimensions in mm Reflow soldering is the only recommended soldering method. Fig 21. Reflow soldering footprint BAS16L (SOD882) 2.2 1.7 solder lands solder resist 0.85 0.5 (3x) 1 2 solder paste occupied area Dimensions in mm 0.6 (3x) 1.3 sot416_fr Fig 22. Reflow soldering footprint BAS16T (SOT416/SC-75) BAS16_SER_5 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 -- 25 August 2008 13 of 20 NXP Semiconductors BAS16 series High-speed switching diodes 2.75 2.45 2.1 1.6 solder lands 0.4 (6x) 0.25 (2x) 0.55 (2x) 0.3 (2x) placement area solder paste occupied area 0.325 0.375 (4x) (4x) 1.7 0.45 (4x) 0.5 (4x) 0.6 (2x) 0.65 (2x) sot666_fr 0.538 2 1.7 1.075 Dimensions in mm Reflow soldering is the only recommended soldering method. Fig 23. Reflow soldering footprint BAS16VV (SOT666) 2.65 solder lands 2.35 1.5 0.6 0.5 (4x) (4x) 0.4 (2x) solder resist solder paste 0.5 (4x) 0.6 (4x) 1.8 0.6 (2x) occupied area Dimensions in mm sot363_fr Fig 24. Reflow soldering footprint BAS16VY (SOT363/SC-88) BAS16_SER_5 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 -- 25 August 2008 14 of 20 NXP Semiconductors BAS16 series High-speed switching diodes 1.5 solder lands 4.5 0.3 2.5 solder resist occupied area 1.5 Dimensions in mm preferred transport direction during soldering 1.3 2.45 5.3 1.3 sot363_fw Fig 25. Wave soldering footprint BAS16VY (SOT363/SC-88) 2.65 1.85 1.325 solder lands 2 solder resist solder paste occupied area Dimensions in mm 2.35 0.6 (3x) 3 1.3 0.5 (3x) 1 0.55 (3x) sot323_fr Fig 26. Reflow soldering footprint BAS16W (SOT323/SC-70) BAS16_SER_5 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 -- 25 August 2008 15 of 20 NXP Semiconductors BAS16 series High-speed switching diodes 4.6 2.575 1.425 (3x) solder lands solder resist occupied area 3.65 2.1 1.8 Dimensions in mm preferred transport direction during soldering 09 (2x) sot323_fw Fig 27. Wave soldering footprint BAS16W (SOT323/SC-70) 3.05 2.1 solder lands solder resist 1.65 0.95 0.5 (2x) 0.6 (2x) solder paste occupied area 2.2 0.5 (2x) 0.6 (2x) Dimensions in mm sod323_fr Fig 28. Reflow soldering footprint BAS316 (SOD323/SC-76) BAS16_SER_5 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 -- 25 August 2008 16 of 20 NXP Semiconductors BAS16 series High-speed switching diodes 5 2.9 1.5 (2x) solder lands solder resist occupied area 1.2 2.75 (2x) Dimensions in mm preferred transport direction during soldering sod323_fw Fig 29. Wave soldering footprint BAS316 (SOD323/SC-76) 2.15 1.1 solder lands solder resist 1.2 0.5 0.6 (2x) (2x) solder paste occupied area 0.7 (2x) 0.8 (2x) Dimensions in mm sod523_fr Reflow soldering is the only recommended soldering method. Fig 30. Reflow soldering footprint BAS516 (SOD523/SC-79) BAS16_SER_5 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 -- 25 August 2008 17 of 20 NXP Semiconductors BAS16 series High-speed switching diodes 12. Revision history Table 10. Revision history Release date 20080825 Data sheet status Product data sheet Change notice Supersedes BAS16_4 BAS16H_1 BAS16J_1 BAS16L_1 BAS16T_1 BAS16VV_BAS16VY_3 BAS16W_4 BAS316_4 BAS516_1 Document ID BAS16_SER_5 Modifications: * * * * * * * * * The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Table 5 "Marking codes": marking code amended for BAS16W Table 6 "Limiting values": for BAS16, BAS16T, BAS16W and BAS516 change of VRRM maximum value from 85 V to 100 V Table 6 "Limiting values": for BAS16, BAS16L, BAS16T, BAS16W and BAS516 change of VR maximum value from 75 V to 100 V Table 8 "Characteristics": change of IR condition VR from 75 V to 80 V for Tj = 25 C Table 8 "Characteristics": change of IR maximum value from 1.0 A to 0.5 A for VR = 80 V and Tj = 25 C Table 8 "Characteristics": change of IR condition VR from 75 V to 80 V for Tj = 150 C Section 13 "Legal information": updated Product specification Product data sheet Product data sheet Product specification Product specification Product data sheet Product specification Product specification Product specification BAS16_3 BAS16VV_BAS16VY_2 BAS16W_3 BAS316_3 - BAS16_4 BAS16H_1 BAS16J_1 BAS16L_1 BAS16T_1 BAS16VV_BAS16VY_3 BAS16W_4 BAS316_4 BAS516_1 20011010 20050415 20070308 20030623 19980120 20070420 19990506 20040204 19980831 BAS16_SER_5 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 -- 25 August 2008 18 of 20 NXP Semiconductors BAS16 series High-speed switching diodes 13. Legal information 13.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.3 Disclaimers General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BAS16_SER_5 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 -- 25 August 2008 19 of 20 NXP Semiconductors BAS16 series High-speed switching diodes 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information. . . . . . . . . . . . . . . . . . . . . 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 18 Legal information. . . . . . . . . . . . . . . . . . . . . . . 19 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 19 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Contact information. . . . . . . . . . . . . . . . . . . . . 19 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 25 August 2008 Document identifier: BAS16_SER_5 |
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